Graphene based nickel nanocrystal flash memory

Formation of nickel-based nanocrystal monolayers for nonvolatile memory applications

Metal Nanocrystal Memory With Pt Single- and Dual-Layer NC With Low-Leakage Al2O3 Blocking Dielectric

In this letter, we report metal nanocrystal (NC)-based Flash memory devices with single-layer (SL) and dual-layer (DL) Pt NCs as the storage element. The devices are fabricated using CMOS compatible process flow with optimized low-leakage high-k Al2O3 as the control dielectric. Large memory window (10 V for SL and 15 V for DL devices) is observed due to overerase, which increases the overall wi...

Computer Simulation of Charging and Erasing Transients of a Ge/Si Hetero-nanocrystal-based Flash Memory

The transient process of the programming and erasing is very important for a nanocrystalfloating-gate flash memory. In this work, a computer simulation was carried out to investigate the charging, retention and erasing processes of our proposed Ge/Si hetero-nanocrystal floating gate flash memory. The transient gate current, the transient drain current and the average charge in one dot were simu...

Nanocrystal Non-Volatile Flash Memory Devices: A Simulation Study

We have simulated the programming/erasing characteristics and studied the reliability aspects of silicon nanocrystal memory (NCM) cells Due to the charge storage in discrete nodes, NCM cells clearly show a very high robustness against gate and drain disturbs and, furthermore, they are negligibly impacted by SILC.

Molecular memory with atomically smooth graphene contacts

We report the use of bilayer graphene as an atomically smooth contact for nanoscale devices. A two-terminal bucky-ball (C60) based molecular memory is fabricated with bilayer graphene as a contact on the polycrystalline nickel electrode. Graphene provides an atomically smooth covering over an otherwise rough metal surface. The use of graphene additionally prohibits the electromigration of nicke...